- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت MSD602-RT1G
MSD602-RT1G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | MSD602-RT1G |
|---|---|
| حجم فایل | 72.679 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت MSD602-RT1G |
دانلود دیتاشیت |
|---|
سایر مستندات
MSD602-RT1 5 pages
MSD602-RT1G 5 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MSD602-RT1G
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 200mW
- Transition Frequency (fT): -
- DC Current Gain (hFE@Ic,Vce): 120@150mA,10V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@300mA,30mA
- Package: SC-59
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
- Power - Max: 200mW
- Frequency - Transition: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- Base Part Number: MSD60
- detail: Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59